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Bonding of nitrogen in dilute GaInAsN and AlGaAsN studied by Raman spectroscopy

Bindungsverhalten von Stickstoff in verdünntem GaInAsN und AlGaAsN untersucht mittels Ramanspektroskopie
: Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Maier, M.


Solid-State Electronics 47 (2003), No.3, pp.461-465
ISSN: 0038-1101
Journal Article
Fraunhofer IAF ()
group III-nitrides; Gruppe III-Nitride; group III-arsenide; Gruppe III Arsenide; III-V semiconductor; III-V Halbleiter; raman spectroscopy; Ramanspektroskopie; molecular beam epitaxy; Molekularstrahlepitaxie

To gain information on the local bonding of the nitrogen, Ga1-xInxAs1-yNy with x <= 0.12 and y <= 0.04 and AlxGa1-xAs1-YNy with x <= 0.05 and y <= 0.04 have been studied by Raman spectroscopy. When adding In to GaAsN, the nitrogen-induced vibrational mode near 470 cm-1 observed in GaAsN was found to split into up to three components, with one of the In-N related modes at higher and the other at lower frequencies than the Ga-N mode. Upon thermal annealing, the relative mode intensities were found to change in favor of the In-N related modes, indicating a redistribution of the III-N bonds. For AlxGa1-xAs0.99N0.01, in contrast, the almost exclusive formation of complexes with Al-to-N bonding was observed already for a low Al content of x = 0.05, as seen from a complete switch in mode intensity from the Ga-N mode at 470 cm-1 to a new Al-N related mode near 450 cm-1. This result was confirmed by a corresponding analysis of the quinary compound AlGaInAsN.