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DNA-sensor based on AlGaN/GaN high electron mobility transistor

: Schwarz, S.U.; Linkohr, S.; Lorenz, P.; Krischok, S.; Nakamura, T.; Cimalla, V.; Nebel, C.E.; Ambacher, O.


Physica status solidi. A 208 (2011), No.7, pp.1626-1629
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Journal Article
Fraunhofer IAF ()
AlGaN/GaN HEMT; DNA hybridization sensor; photochemical functionalization

AlGaN/GaN high electron mobility transistors (HEMTs) show great promise for the realization of sensors for biomolecular, pharmaceutical and medical purposes. The high sensitivity and the stability in biological solutions are great advantages of this approach. Therefore, we created a novel HEMT-based DNA hybridization sensor. In contrast to other comparable devices, this sensor uses a system of linker molecules to covalently bond the probe DNA to the semiconductor surface. This approach offers the possibility to adjust the density of the probe DNA and provides a highly stable connection. The device shows a clear signal when exposed to the target DNA sequence. Due to the robust attachment of the probe DNA, the double strand can be denatured without corrupting the device. Consequently, the detection of the hybridization event can be repeated several times.