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Application of HICUM/L0 to InP DHBTs using single-transistor parameter extraction

: Nardmann, T.; Lehmann, S.; Schröter, M.; Driad, R.

Verband der Elektrotechnik, Elektronik, Informationstechnik -VDE-:
23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011. Conference Proceedings : May 22 - 26, 2011, Maritim ProArte Hotel, Berlin,Germany
Berlin: VDE-Verlag, 2011
ISBN: 978-3-8007-3356-9
International Conference on Indium Phosphide and Related Materials (IPRM) <23, 2011, Berlin>
Conference Paper
Fraunhofer IAF ()

The suitability of the compact model HICUM for modeling III-V HBTs is evaluated. For this purpose, a complete parameter extraction for HICUM/L0 is performed using single-transistor extraction routines. The suitability of some of these methods is discussed and the best available ones are identified. Model results are presented and compared with measurements. Good agreement is obtained demonstrating the fundamental suitability of HICUM for InP DHBTs and supporting the deployment of this technology.