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Dual-color InAs/GaSb superlattice focal-plane array technology

: Rehm, R.; Walther, M.; Rutz, F.; Schmitz, J.; Wörl, A.; Masur, J.-M.; Scheibner, R.; Wendler, J.; Ziegler, J.


Journal of Electronic Materials 40 (2011), No.8, pp.1738-1743
ISSN: 0361-5235
ISSN: 1543-186X
Journal Article
Fraunhofer IAF ()
InAs/GaSb type II superlattice; MWIR; 3-bis-5 µm; dual-color; dual-band; missile approach warning; infrared camera; focal plane array; thermal imaging; carbon dioxide

Within a very few years, InAs/GaSb superlattice technology has proven its suitability for high-performance infrared imaging detector arrays. At the Fraunhofer Institute for Applied Solid State Physics (IAF) and AIM Infrarot-Module GmbH, efforts have been focused on developing mature fabrication technology for dual-color InAs/GaSb superlattice focal-plane arrays for simultaneous, colocated detection at 3 µm to 4 µm and 4 µm to 5 µm in the mid-wavelength infrared atmospheric transmission window. Integrated into a wide-field-of-view missile approach warning system for an airborne platform, a very low number of pixel outages and cluster defects is mandatory for bispectral detector arrays. Process refinements, intense root-cause analysis, and specific test methodologies employed at various stages during the process have proven to be the key for yield enhancements.