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  4. Comparison of a single and a dual-gate GaN switching-amplifier for future communication systems
 
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2011
Conference Paper
Title

Comparison of a single and a dual-gate GaN switching-amplifier for future communication systems

Abstract
A high efficiency switch-mode amplifier with a dualgate configuration in the output stage is designed in a 250 nm GaN HEMT technology. Measurements are performed up to 8 Gbps using periodic square wave signals and bandpass delta sigma (BPDS) signals. The results are compared to a single-gate amplifier which uses the same driver stage and gate width. The dual-gate amplifier achieves a higher output power and shows a better RF-performance at bit rates above 2 Gbps. A broadband output power of 14 W and a PAE of 77.5 % at 0.9 Gbps are demonstrated. Furthermore, a 5.2 Gbps BPDS signal with an eye amplitude of about 50 V is measured. It is the first time that such high amplitudes are achieved in combination with bit rates above 5 Gbps. The presented measurement results demonstrate the importance of GaN devices for future switch-mode amplifiers.
Author(s)
Heck, S.
Maroldt, S.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Bräckle, A.
Berroth, M.
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
IEEE MTT-S International Microwave Symposium, IMS 2011  
Conference
International Microwave Symposium (IMS) 2011  
DOI
10.1109/MWSYM.2011.5972874
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • class-D

  • class-S

  • dual-gate

  • GaN

  • high electron mobility transistor

  • monolithic microwave integrated circuit (MMIC)

  • switch mode amplifier

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