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Comparison of a single and a dual-gate GaN switching-amplifier for future communication systems

: Heck, S.; Maroldt, S.; Bräckle, A.; Berroth, M.; Quay, R.


IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium, IMS 2011 : June 5 - 10, 2011, Baltimore Convention Center
New York, NY: IEEE, 2011
ISBN: 978-1-61284-754-2 (Print)
ISBN: 978-1-61284-757-3
ISBN: 978-1-61284-756-6 (Online)
4 pp.
International Microwave Symposium (IMS) <2011, Baltimore/Md.>
Conference Paper
Fraunhofer IAF ()
class-D; class-S; dual-gate; GaN; high electron mobility transistor; monolithic microwave integrated circuit (MMIC); switch mode amplifier

A high efficiency switch-mode amplifier with a dualgate configuration in the output stage is designed in a 250 nm GaN HEMT technology. Measurements are performed up to 8 Gbps using periodic square wave signals and bandpass delta sigma (BPDS) signals. The results are compared to a single-gate amplifier which uses the same driver stage and gate width. The dual-gate amplifier achieves a higher output power and shows a better RF-performance at bit rates above 2 Gbps. A broadband output power of 14 W and a PAE of 77.5 % at 0.9 Gbps are demonstrated. Furthermore, a 5.2 Gbps BPDS signal with an eye amplitude of about 50 V is measured. It is the first time that such high amplitudes are achieved in combination with bit rates above 5 Gbps. The presented measurement results demonstrate the importance of GaN devices for future switch-mode amplifiers.