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Measurement of electrical parameters of silicon up to 60GHz

: Salhi, F.; Riedl, W.; John, W.; Reich, H.

IEEE Components, Packaging, and Manufacturing Technology Society:
EPTC 2005, 7th Electronics Packaging Technology Conference
New York, NY: IEEE, 2005
ISBN: 0-7803-9578-6
ISBN: 0-7803-9579-4
Electronics Packaging Technology Conference (EPTC) <7, 2005, Singapur>
Conference Paper
Fraunhofer IZM ()

This paper summarises test structures for continuous determination of electrical properties of material. On the basis of onchip technology a silicon wafers with a resistivities (p) of 2000Ohm*cm are characterised. A method for determination of material properties in a frequency range of 4 GHz to at least 60 GHz is presented. Fundamental importance is attached to monitoring of the relative permittivity e, and the dissipation factor tan. High frequency measurements arc compared to simulation results. Finally, the extracted electrical material parameters of silicon are presented and discussed.