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2009
Conference Paper
Titel
Thin hermetic passivation of semiconductors using low temperature borosilicate glass - Benchmark of a new wafer-level packaging technology
Abstract
A novel approach on wafer-level passivation using a thin, hermetic borosilicate glass layer replacing the polymers in redistribution is presented here. The technology will be benchmarked to those conventional technologies. The glass layer is deposited at low temperatures (T < 100°C) using a plasma-enhanced e-beam deposition and can be structured by a lift-off process using a standard photo resist process for masking. The process flow is fully compatible with standard CMOS post processing and is integrated in a state-of-the-art production environment.