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Silicon-interposer with high density Cu-filled TSVs

 
: Wieland, R.; Zoschke, K.; Jürgensen, N.; Merkel, R.; Nebrich, L.; Wolf, J.

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Institute of Electrical and Electronics Engineers -IEEE-:
2nd IEEE International 3D System Integration Conference, 3DIC 2010 : Held at the "Fraunhofer Haus" in Munich in November 16-18, 2010
New York, NY: IEEE, 2010
ISBN: 978-1-4577-0526-7
ISBN: 1-4577-0526-5
ISBN: 978-1-4577-0527-4
Art. 5751469
International 3D System Integration Conference (3DIC) <2, 2010, Munich>
English
Conference Paper
Fraunhofer IZM ()

Abstract
A silicon-interposer technology with high density Cu-filled TSVs and Cu-based redistribution layers was realized. Test structures in a process control module were used for electrical characterization.

: http://publica.fraunhofer.de/documents/N-172919.html