Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Investigation of strain relaxation in patterned strained silicon-on-insulator structures by Raman spectroscopy and computer simulation

: Gu, D.; Naumann, F.; Petzold, M.; Zhu, M.; Baumgart, H.


Institute of Electrical and Electronics Engineers -IEEE-:
International Semiconductor Device Research Symposium, ISDRS 2009 : College Park, Maryland, USA, 9 - 11 December 2009
Piscataway/NJ: IEEE, 2009
ISBN: 978-1-4244-6030-4
ISBN: 978-1-4244-6031-1
2 pp.
International Semiconductor Device Research Symposium (ISDRS) <2009, College Park/Md.>
Conference Paper
Fraunhofer IWM ()

The authors study the simplest but scientifically relevant case, where in the absence of capping layers or any other precautions, strain relaxation by film patterning and high temperature annealing can be observed. The thermal stability of bi-axial strain is maintained solely by a nonepitaxial bonded interface with the amorphous buried oxide in sSOI after patterning and subsequent high temperature annealing.