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Finite element modeling and raman study of strain distribution in patterned device islands on strained silicon-on-insulator (sSOI) substrates

 
: Gu, D.; Baumgart, H.; Naumann, F.; Petzold, M.

Electrochemical Society -ECS-:
218th ECS meeting abstracts 2010. Vol.3 : Las Vegas, Nevada, USA, 10 - 15 October 2010
Red Hook, NY: Curran, 2011
ISBN: 978-1-617-82094-6
pp.1702
Electrochemical Society (Meeting) <218, 2010, Las Vegas/Nev.>
English
Conference Paper
Fraunhofer IWM ()

: http://publica.fraunhofer.de/documents/N-172572.html