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Dielectric material impact on capacitive RF MEMS reliability

: Lisec, T.; Huth, C.; Wagner, B.

European Microwave Association:
34th European Microwave Conference 2004. Vol.1 : Tuesday 12th, Wednesday 13th and Thursday 14th October, RAI International Exhibition and Congress Centre, Amsterdam; Part of European Microwave Week 2004; Conference proceedings
London: Horizon House, 2004
ISBN: 1-58053-992-0
European Microwave Week (EuMW) <7, 2004, Amsterdam>
Conference Paper
Fraunhofer ISIT ()

The influence of different types of dielectrics on the switching behaviour and reliability of capacitive RF MEMS switches fabricated by metal surface-micromachining is investigated. Sputtered AlN layers are compared to PECVD Si3N4 and Ta2O5 layers. It has been found that switches with sputtered AlN can be operated without failure in a wide range of driving conditions. Besides the dielectric charging problem another degradation has been observed independent of the dielectric material. The effect only occurs for operation in ambient air and is probably caused by an electrochemical reaction.