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Failure mechanisms of AIN based RF-MEMS switches under DC and ESD stresses
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2007
Conference Paper
Titel
Failure mechanisms of AIN based RF-MEMS switches under DC and ESD stresses
Author(s)
Ruan, J.
Nolhier, N.
Bafleur, M.
Bary, L.
Mauran, N.
Coccetti, F.
Lisec, T.
Plana, R.
Hauptwerk
14th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2007
Konferenz
International Symposium on the Physical and Failure Analysis of Integrated Circuits 2007
DOI
10.1109/IPFA.2007.4378070
Language
English
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Fraunhofer-Institut für Siliziumtechnologie ISIT