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A correlation of capacitive RF-MEMS reliability to AlN dielectric film spontaneous polarization

: Papandreou, E.; Papaioannou, G.; Lisec, T.


International journal of microwave and wireless technologies 1 (2009), No.1, pp.43-47
ISSN: 1759-0795
ISSN: 1759-0787
Journal Article
Fraunhofer ISIT ()

This paper investigates the effect of spontaneous polarization of magnetron-sputtered aluminum nitride on the electrical properties and reliability of Radio Frequency - Micro-Electro-Mechanical Systems capacitive switches. The assessment is performed with the aid of application of thermally stimulated polarization currents in metal-insulator-metal capacitors and temperature dependence of device capacitance. The study reveals the presence of a surface charge, which is smaller than that expected from material spontaneous polarization, but definitely is responsible for the low degradation rate under certain bias polarization life tests.