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Assessing the role of transition metals in shunting mechanisms using synchrotron-based techniques

: Buonassisi, T.; Vyvenko, O.F.; Istratov, A.A.; Weber, E.R.; Hahn, G.; Sontag, D.; Rakotoniaina, J.P.; Breitenstein, O.; Isenberg, J.; Schindler, R.

Kurokawa, K. ; Institute of Electrical and Electronics Engineers -IEEE-:
3rd World Conference on Photovoltaic Energy Conversion 2003. Proceedings. Vol.B : Joint conference of 13th PV Science & Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference ; Osaka International Congress Center "Grand Cube", Osaka, Japan, 11 - 18 May 2003
Osaka, 2003
ISBN: 4-9901816-1-1
World Conference on Photovoltaic Energy Conversion (WCPEC) <3, 2003, Osaka>
PV Science and Engineering Conference <13, 2003, Osaka>
PV Specialists Conference <30, 2003, Osaka>
European PV Solar Energy Conference <18, 2003, Osaka>
Conference Paper
Fraunhofer ISE ()

Shunts in RGS and BaySix materials have been analyzed using a powerful combination of techniques including lock-in thermography, x-ray beam induced current, and x-ray fluorescence microscopy. Transition metals have been identified at shunt locations in both materials. Titanium and silver were found at a shunt in BaySix material, suggesting a process-induced defect related to faulty metallization grid deposition. Iron and copper were found at inversion channels in RGS material, suggesting these extended defects are effective gettering sites for transition metals, which enhance the generation- recombination current in this extended space-charge region. The role of transition metals in certain shunting mechanisms in multicrystalline silicon (mc-Si) solar cells is assessed in light of these experimental data.