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Non-empirical modelization of space degradation of multijunction cells

: Bourgoin, J.C.; Zazoui, M.; Makham, S.; Hadrami, M.; Sun, G.G.; Signorini, C.; Taylor, S.J.; Strobl, G.; Dietrich, R.; Bett, A.W.; Guard, O.

Kurokawa, K. ; Institute of Electrical and Electronics Engineers -IEEE-:
3rd World Conference on Photovoltaic Energy Conversion 2003. Proceedings. Vol.A : Joint conference of 13th PV Science & Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference ; Osaka International Congress Center "Grand Cube", Osaka, Japan, 11 - 18 May 2003
Osaka, 2003
ISBN: 4-9901816-0-3
World Conference on Photovoltaic Energy Conversion (WCPEC) <3, 2003, Osaka>
PV Science and Engineering Conference <13, 2003, Osaka>
PV Specialists Conference <30, 2003, Osaka>
European PV Solar Energy Conference <18, 2003, Osaka>
Conference Paper
Fraunhofer ISE ()

The fluence dependences of the short circuit and the open circuit voltage, induced by an irradiation, depend on a single parameter k, product of the introduction rates of the defects responsible for non radiative recombination times their trapping cross section. This parameter, characteristic of a given material, can be determined experimentally, hence allowing the computation of the degradation for any type of cell or multijunction cell. The validity of this procedure is demonstrated and illustrated in the case of the degradation of the short circuit current of 2J GaInP/GaAs/Ge cells.