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A systematic approach to reduce process-induced shunts in back-contacted MC-SI solar cells

: Granek, F.; Weeber, A.; Tool, K.; Kinderman, R.; Jong, P. de


IEEE Electron Devices Society:
IEEE 4th World Conference on Photovoltaic Energy Conversion 2006. Vol.3 : Waikoloa, Hawaii, 7 - 12 May 2006
Piscataway, NJ: IEEE Operations Center, 2006
ISBN: 1-4244-0016-3
World Conference on Photovoltaic Energy Conversion (WCPEC) <4, 2006, Waikoloa/Hawaii>
Conference Paper
Fraunhofer ISE ()

One of the main reasons why back-contact (PUM) cells stay somewhat behind in efficiency is because of their lower shunt resistance. A simple method was developed to determine the shunt resistance of the individual process-induced shunt paths. These contributions have led to an electrical model describing the process-induced shunt paths. Individual shunt paths were analysed in detail. Changes in processing were introduced to eliminate the shunting problems. These changes resulted in the shunt resistances beyond 5 kcm2 on 225 cm2 cells with industrial processing.