Strain-balanced GaInAs/GaAsP multi quantum wells for space solar cells

Several GaAs strain-balanced quantum well solar cells with different well composition and well number were investigated. A comprehensive characterisation with XRD, quantum efficiency as well as light and dark IV-measurements revealed the enhanced performance of such a design compared to a conventional bulk GaAs solar cell. The proper choice of well depth and strain compensation overcompensates the reduction in Voc by an increase in Jsc resulting in overall higher AMO conversion efficiencies for the strain-balanced quantum well solar cell approach.