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Industrial PVD metallization for high efficiency crystalline silicon solar cells

 
: Nekarda, J.; Reinwand, D.; Grohe, A.; Hartmann, P.; Preu, R.; Trassl, R.; Wieder, S.

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Postprint urn:nbn:de:0011-n-1720692 (207 KByte PDF)
MD5 Fingerprint: faa1ddb5fb1090cec7e8d4c7d55ff244
© 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Created on: 18.8.2012


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
34th IEEE Photovoltaic Specialists Conference, PVSC 2009. Vol.2 : Philadelphia, Pennsylvania, USA, 7 - 12 June 2009
Piscataway/NJ: IEEE, 2009
ISBN: 978-1-4244-2949-3
ISBN: 1-4244-2949-8
ISBN: 978-1-4244-2950-9
pp.892-896
Photovoltaic Specialists Conference (PVSC) <34, 2009, Philadelphia/Pa.>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
In this paper we present first results concerning different thermal evaporation processes for thin aluminum layers, which are carried out on a pilot system with a throughput of up to 540 wafers/h (156x156 mm2). To qualify the processes the deposited aluminum layers were evaluated with respect to homogeneity and conductivity. Additionally the effect of the different processes on the passivation quality of a thermally grown 100 nm thick SiO 2 was analyzed by means of lifetime measurements, indicating a negligible effect of the conducted process variations on the passivation quality. Finally high-efficiency silicon solar cells were prepared to determine the overall potential and to compare it with an electron beam (e-gun) evaporation process, which is used as a standard process in our laboratory. An efficiency of up to 21% was achieved by the high deposition rate technique performing at least as well as our standard high efficiency process.

: http://publica.fraunhofer.de/documents/N-172069.html