Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Evaluating the aluminum-alloyed p+-layer of silicon solar cells by emitter saturation current density and optical microspectroscopy measurements

 
: Woehl, R.; Gundel, P.; Krause, J.; Rühle, K.; Heinz, F.D.; Rauer, M.; Schmiga, C.; Schubert, M.C.; Warta, W.; Biro, D.

:
Postprint urn:nbn:de:0011-n-1720391 (833 KByte PDF)
MD5 Fingerprint: 7da1348a5785cae44e026443163efacd
© 2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Created on: 24.5.2013


IEEE transactions on electron devices 58 (2011), No.2, pp.441-447
ISSN: 0018-9383
English
Journal Article, Electronic Publication
Fraunhofer ISE ()
Siliciummaterialcharakterisierung; PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Charakterisierung; Zellen und Module

Abstract
Surface-passivated and surface-unpassivated aluminum-alloyed p +-layers are characterized. By varying the firing conditions and the thickness of the screen-printed aluminum paste, different sheet resistances Rsh of the p+-layer were fabricated. The emitter saturation current density J0eplotted versus Rsh follows distinctly different trends for the passivated and unpassivated samples. An aluminum paste with a boron additive achieves a much higher doping concentration and a lower sheet resistance but nevertheless follows the same J 0ecurves as the pure Al paste. The aluminum p+-layer was quantitatively analyzed with microphotoluminescence and FanoRaman measurements. The latter shows an increased defect recombination at the interface between the p+-layer and the moderately doped Si bulk. The lower ShockleyReadHall lifetime in this region can be attributed to a high defect concentration in the most highly doped layer, represents an impediment to the reduction of J 0efor Al- doped emitter regions, and needs to be optimized in future investigations.

: http://publica.fraunhofer.de/documents/N-172039.html