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Light-induced degradation in compensated p- and n-type Czochralski silicon wafers

: Geilker, J.; Kwapil, W.; Rein, S.


Journal of applied physics 109 (2011), No.5, Art. 053718, 6 pp.
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Feedstock; Kristallisation und Wafering; Industrielle und neuartige Solarzellenstrukturen

Light-induced degradation (LID) due to boron-oxygen complex formation seriously diminishes the minority carrier lifetime of p-type Czochralski-grown (Cz) wafers. Depending linearly on the boron concentration NA in uncompensated silicon, the boron-oxygen defect density was suggested to depend on the net doping concentration p0 = NA - ND in compensated p-type samples, containing similar amounts of boron and phosphorus [D. Macdonald, F. Rougieux, A. Cuevas, etal., Journal of Applied Physics 105, 093704 (2009)]. However, this dependency contradicts observations of LID in compensated n-type silicon wafers [T. Schutz-Kuchly, J. Veirman, S. Dubois, etal., Applied Physics Letters 96, 1 (2010)], which are confirmed in this study by investigating the boron-oxygen complex formation on a large variety of compensated p- and n-type samples. In spite of their high boron content, compensated n-type samples may show a less pronounced LID than p-type samples containing less boron. Our ex periments indicate that in compensated silicon, the defect concentration is only a function of the compensation ratio RC = (NA ND)/(NA - ND).