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In Situ Characterization of Strain Distribution in Broad-Area High-Power Lasers under Operation by High-Resolution X-Ray Diffraction and Topography Using Synchrotron Radiation



Journal of Physics. D. Applied Physics 32 (1999), pp.123-127
ISSN: 0022-3727
Journal Article
Fraunhofer IZFP ()
laser; strain; x-ray diffraction

The strain distribution in broad-area high-power semiconductor laser diodes is investigated both before and during operation and degradation by high-resolution x-ray diffraction using synchrotron radiation. An inhomogeneous strain distribution along the stripe and at the stripe edges is found due to the mounting and bonding of the laser device. From the current-induced thermal lattice expansion the temperature rise during operation near the active region is estimated. The radius of curvature of the laser changes during operation and a different thermal behaviour on the front and the rear facet is found. The temperature distribution along the laser stripe could be correlated with the defect distribution observed after degradation by cathodoluminescence.