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Fabrication of n- and p-type organic thin film transistors with minimized gate overlaps by self-aligned nanoimprinting

: Palfinger, U.; Auner, C.; Gold, H.; Haase, A.; Kraxner, J.; Haber, T.; Sezen, M.; Grogger, W.; Domann, G.; Jakopic, G.; Krenn, J.R.; Stadlober, B.


Advanced Materials 22 (2010), No.45, pp.5115-5119
ISSN: 0935-9648
ISSN: 1521-4095
Journal Article
Fraunhofer ISC ()
Transistor; Nanolithographie; Werkstoff

A nanoimprinting process that enables fabrication of self-aligned p- and n-type organic thin film transistors with small channel lengths is presented. Nanoimprint lithography with back-side exposure permit precise definition of the channel length down to the submicrometer regime and a diminutive gate to source/drain overlap. The self-aligned manufacturing process enables transistor setups with minimized electrode overlaps resulting in distinct decrease of parasitic capacitances and considerable increase in transition frequency. Fully functional small channel OTFTs with p- and n-type semiconductors are fabricated on glass as well as on flexible substrates with transition frequencies up to 400 kHz.