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Structural and photoconducting properties of MBE and MOCVD grown III-nitride double-heterostructures

 
: Hauguth-Frank, S.; Lebedev, V.; Tonisch, K.; Romanus, H.; Kups, T.; Büchner, H.-J.; Jäger, G.; Ambacher, O.; Schober, A.

Aksnes, A. ; Materials Research Society -MRS-:
Materials and devices for laser remote sensing and optical communication : Symposium held March 25 - 27, 2008, San Francisco
Warrendale, Pa.: Materials Research Society, 2008 (Materials Research Society Symposium Proceedings 1076)
ISBN: 978-1-605-11046-2
ISSN: 0272-9172
pp.155-161
Symposium K "Materials and Devices for Laser Remote Sensing and Optical Communication" <2008, San Francisco/Calif.>
Materials Research Society (MRS Spring Meeting) <2008, San Francisco/Calif.>
English
Conference Paper
Fraunhofer IOF ()

Abstract
Investigations on standing wave (SW) interferometry come in focus of interest in the course of ongoing miniaturization of high precision length measurement systems. A key problem within these efforts is the development of a transparent ultra-thin photodetector for sampling the intensity profile of the generated SW. Group III-materials are promising candidates to ensure a good photodetector performance combined with the required optical transparency. In this work, we report on the interrelation of strain and dislocation density along with the influence of the structural properties on the sensitivity of double-heterostructure III-nitride photodetectors grown by molecular beam and metal organic vapour phase epitaxy.

: http://publica.fraunhofer.de/documents/N-171663.html