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High-performance 6-inch EUV mask blanks produced under real production conditions by ion-beam sputter deposition

: Becker, H.W.; Sobel, F.; Aschke, L.; Renno, M.; Krieger, J.; Buttgereit, U.; Hess, G.; Lenzen, F.; Knapp, K.; Yulin, S.A.; Feigl, T.; Kuhlmann, T.; Kaiser, N.


Grenon, B.J. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.; BACUS International:
22nd Annual BACUS Symposium on Photomask Technology 2001. Vol.1 : 1 - 4 October 2001, Monterey, California, USA
Bellingham, WA: SPIE, 2002 (SPIE Proceedings Series 4889)
ISBN: 0-8194-4675-0
ISBN: 978-0-8194-4675-6
ISSN: 0277-786X
Symposium on Photomask Technology <22, 2002, Monterey/Calif.>
Conference Paper
Fraunhofer IOF ()

EUV mask blanks consist of two thin film systems deposited on low thermal expansion 6 inch substrates (LTEM). First there is the multilayer stack with around 100 alternating layers of elements with different optical properties which are topped by a capping layer. The absorber stack which consists of a buffer and a absorber layer is next. Here a minimum absorption of EUV light of 99 % is required. The stress in both layer systems should be as low as possible. The reduction of defects to an absolute minimum is one of the main challenges. The high-reflective Mo/Si multilayer coatings were designed for normal incidence reflectivity and successfully deposited on 6-inch LTEM substrates by ion-beam sputtering. X-ray scattering, transmission electron microscopy and atomic force microscopy were used for characterization of the multilayer interfaces and the surface morphology. The results are correlated to the measured normal incidence reflectivity using synchrotron radiation at the "Physikalisch- Technischen Bundesanstalt" (PTB) reflectometer at BESSY II, Berlin, Germany. A high resolution laser scanner was used to measure the particle distribution. First multilayer defect results are presented.