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Enhanced depth-resolution analysis with medium energy ion scattering (MEIS) for shallow junction profiling

: Tajima, J.; Park, Y.K.; Fujita, M.; Takai, M.; Schork, R.; Frey, L.; Ryssel, H.


Ryssel, H. ; Institute of Electrical and Electronics Engineers -IEEE-:
Ion Implantation Technology 2000. Proceedings : International Conference on Ion Implantation Technology : Alpbach, Austria, 17 - 22 September 2000
Piscataway, NJ: IEEE Operations Center, 2000
ISBN: 0-7803-6462-7
ISBN: 978-0-7803-6462-2
International Conference on Ion Implantation Technology (IIT) <13, 2000, Alpbach>
Conference Paper
Fraunhofer IISB ()

A rapid shrinkage in a minimum feature size of integrated circuits (ICs) requires analysis with an enhanced depth-resolution for dopants in shallow source-drain regions. Rutherford backscattering Spectroscopy (RBS) with medium energy ion scattering (MEIS) for such analysis should meet the requirement of a depth-resolution of less than 5 nm at a depth of 50 nm in the next 5 years. A toroidal electrostatic analyzer (TEA) with an energy resolution of 4×103 has been used to detect scattering ions. Limitation of energy resolution due to Bohr straggling of probe ions at a shallow implanted depth has been taken into account. Arsenic ions were implanted in SiO 2/Si at energy of 5 keV with a dose of 2 × 1015 /cm2. An ultra shallow profile with a pro jected range of 30 nm with a FWHM (full width at half maximum) of 4.7 ± 0.4 nm was non-destructively measured.