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Triple trench gate IGBTs

: Berberich, S.E.; Bauer, A.J.; Frey, L.; Ryssel, H.


IEEE Electron Devices Society:
17th International Symposium on Power Semiconductor Devices & ICs 2005. Proceedings : May 23 - 26, 2005, Santa Barbara, CA
Piscataway, NJ: IEEE Service Center, 2005
ISBN: 0-7803-8889-5 (Print)
ISBN: 0-7803-8890-9 (CD-ROM)
International Symposium on Power Semiconductor Devices & ICs (ISPSD) <17, 2005, Santa Barbara/Calif.>
Conference Paper
Fraunhofer IISB ()

In this work, we propose an Insulated Gate Bipolar Transistor (IGBT) with a novel lateral triple trench gate architecture, which shows a four times higher forward conduction current compared to devices with a lateral gate or single trench gate structure. For the proof of concept, we realized single trench gate IGBTs using the Reduced Surface Field (RESURF) principle [1,2] for 600V net applications. Typical applications for those integrated smart power systems are, e.g. power management of compact fluorescent lamps (CFL) or solid state relays. Further improvement of the forward conduction mode by using triple trench gate structures was studied.