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Comparison of silicon surface preparation methods for measurement of minority carrier lifetime using the microwave photoconductive decay (µ-PCD) coupled with continuous corona charge (Charge-PCD)

: Pavelka, T.; Pap, A.; Kenesei, P.; Varga, M.; Novinics, F.; Tallián, M.; Borionetti, G.; Guaglio, G.; Pfeffer, M.; Don, E.


Kolbesen, B.O. ; Electrochemical Society -ECS-, Electronics and Photonics Division:
Analytical techniques for semiconductor materials and process characterization 6. ALTECH 2009 : Symposium on "Analytical Techniques for Semiconductor Materials and Process Characterization VI" was held at the 216th meeting of the Electrochemical Society in Vienna from October 4 to 9, 2009
Pennington, NJ: ECS, 2009 (ECS transactions 25, 3)
ISBN: 978-1-566-77740-7
ISBN: 978-1-60768-090-1
ISSN: 1938-5862
Symposium "Analytical Techniques for Semiconductor Materials and Process Characterization" (ALTECH) <6, 2009, Vienna>
Electrochemical Society (Meeting) <216, 2009, Vienna>
Conference Paper
Fraunhofer IISB ()

Experimental results for a new method of measuring the minority carrier lifetime as a process control tool to determine trace metal contamination following wafering and epitaxial growth of silicon in a production environment are reported. In this new method the minority carrier lifetime is measured by microwave photo-conductive decay (-PCD) while charging the surface silicon oxide with a corona charge. We have named the method Charge-PCD. Results are given comparing various qualities of the surface oxides prepared by low temperature methods coupled with various corona charging recipes in order to determine the optimum process and limitations of the new method. ©The Electrochemical Society.