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Lanthanoid implantation for effective work function control in NMOS high-k/metal gate stacks

: Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.


Matsuo, J.:
Ion implantation technology 2010 : 18th International Conference on Ion Implantation Technology, IIT 2010, Kyoto, Japan, 6 - 11 June 2010
2010 (AIP Conference Proceedings 1321)
ISBN: 978-0-7354-0876-0
ISSN: 0094-243X
International Conference on Ion Implantation Technology (IIT) <18, 2010, Kyoto>
Conference Paper
Fraunhofer IISB ()

Effective work function instability of high-K/metal gate MOS stacks after high temperature treatment results in device threshold voltage shifts and is one of the problems associated with the gate-first integration of high-K dielectrics in the CMOS process flow. The exact reason for this instability is subject of intense debate. In this paper it is shown that a positive threshold voltage shift due to thermal treatment can be compensated by implanting the lanthanoids lanthanum or dysprosium into the high-K stack.