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Influence of annealing parameters on surface roughness, mobility, and contact resistance of aluminium implanted 4H SiC

: Schmitt, H.; Häublein, V.; Bauer, A.J.; Frey, L.


Monakhov, E.V.:
Silicon carbide and related materials 2010. Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010 : 29 August - 2 September 2010, Sundvolden Conference Center, held in Oslo, Norway
Dürnten: Trans Tech Publications, 2011 (Materials Science Forum 679/680)
ISBN: 978-3-03-785079-4
European Conference on Silicon Carbide and Related Materials (ECSCRM) <8, 2010, Oslo>
Conference Paper
Fraunhofer IISB ()

The impact of implantation temperature and dose as well as the annealing process with and without a graphite capping layer on surface roughness, carrier mobility and specific contact resistance are investigated and compared. The use of the capping layer is proven to be particularly advantageous: (1) a deterioration of surface roughness can be avoided even for high dose implantations and (2) the specific contact resistance is reduced. Furthermore, it is shown that a capping layer prevents surface contamination during annealing.