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Comparative study on metallization and passivation materials for high temperature sensor applications

: Daves, W.; Krauss, A.; Le-Huu, M.; Kronmüller, S.; Häublein, V.; Bauer, A.J.; Frey, L.


Monakhov, E.V.:
Silicon carbide and related materials 2010. Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010 : 29 August - 2 September 2010, Sundvolden Conference Center, held in Oslo, Norway
Dürnten: Trans Tech Publications, 2011 (Materials Science Forum 679/680)
ISBN: 978-3-03-785079-4
European Conference on Silicon Carbide and Related Materials (ECSCRM) <8, 2010, Oslo>
Conference Paper
Fraunhofer IISB ()

We investigated the performance of different metallization/passivation systems for high temperature applications. The metallizations comprised a 150 nm sputtered Pt or a 150 nm e-beam evaporated PtRh layer on Ti/TiN underlayers, respectively. The passivation coatings consisted of amorphous PECVD SiO x, of amorphous stress-reduced PECVD SiNy, and of a SiOx/ SiNy stack. For samples with SiOx and SiOx/ SiNy passivation layers the electrical properties changed after a short high temperature anneal at 600 °C but then remained stable during further annealing. This was attributed to the formation of PtTi alloys, which stabilized the metallization stack. In samples with SiN y passivation a significant Pt out-diffusion into the passivation layer was observed. This led to a degradation of the electrical and mechanical properties. The best performance was achieved with Pt-based metallizations and SiOx or SiOx/SiNy passivations.