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4H-SiC n-MOSFET logic circuits for high temperature operation

: Le-Huu, M.; Grieb, M.; Schrey, F.F.; Schmitt, H.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.


Monakhov, E.V.:
Silicon carbide and related materials 2010. Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010 : 29 August - 2 September 2010, Sundvolden Conference Center, held in Oslo, Norway
Dürnten: Trans Tech Publications, 2011 (Materials Science Forum 679/680)
ISBN: 978-3-03-785079-4
European Conference on Silicon Carbide and Related Materials (ECSCRM) <8, 2010, Oslo>
Conference Paper
Fraunhofer IISB ()

The suitability of normally-off 4H-SiC MOSFETs for high temperature operation in logic gates is investigated. Fowler-Nordheim analysis shows a lowering of the effective tunneling barrier height at elevated temperatures. Trap assisted tunneling induced by carbon interstitials is proposed as the responsible mechanism. Nevertheless, reliability of MOS devices even at 400°C is excellent with an extrapolated critical field of 2.69MV/cm for a 10 year time to dielectric breakdown. The switching behavior of logic gates is also characterized between 25°C and 400°C. Using these logic gates, a fully integrated edge triggered flip-flop is build and high temperature operation is demonstrated.