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Effect of increased oxide hole trap density due to nitrogen incorporation at the SiO2/SiC interface on F-N current degradation

: Strenger, C.; Bauer, A.J.; Ryssel, H.


Monakhov, E.V.:
Silicon carbide and related materials 2010. Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010 : 29 August - 2 September 2010, Sundvolden Conference Center, held in Oslo, Norway
Dürnten: Trans Tech Publications, 2011 (Materials Science Forum 679/680)
ISBN: 978-3-03-785079-4
European Conference on Silicon Carbide and Related Materials (ECSCRM) <8, 2010, Oslo>
Conference Paper
Fraunhofer IISB ()

Metal-oxide-semiconductor (MOS) capacitors were formed on 4H-silicon carbide (SiC) using thermally grown silicon dioxide (SiO2) as gate dielectrics, both with and without nitrogen incorporation within the oxide. The field dependence of the charge trapping properties of these structures was analyzed and linked to the observed Fowler-Nordheim current degradation. Furthermore, first considerations were presented that indicate an electron impact emission induced generation of positive oxide trapped charge.