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Deep UV laser induced fluorescence in fluoride thin films

: Heber, J.; Mühlig, C.; Triebel, W.; Danz, N.; Thielsch, R.; Kaiser, N.


Applied physics. A 76 (2003), No.1, pp.123-128
ISSN: 0340-3793
ISSN: 0721-7250
ISSN: 0947-8396 (Print)
ISSN: 1432-0630 (Online)
Journal Article
Fraunhofer IOF ()
deep UV laser induced fluorescence; fluoride thin films; dielectric thin films; LaF/sub 3/; AlF/sub 3/; MgF/sub 2/; time-resolved measurements; hydrocarbons; multilayer stacks; cerium emission; high-reflective UV mirrors; ArF excimer laser irradiation; energy density dependent measurements; linear absorption process; interference effects; multilayer emission spectra; 193 nm

Fluorescence experiments have been performed to study the interaction of 193-nm laser radiation with dielectric thin films of LaF/sub 3/, AlF/sub 3/, and MgF/sub 2/. Spectral- and time-resolved measurements reveal the presence of cerium in LaF/sub 3/ and the influence of hydrocarbons in MgF/sub 2/ and LaF/sub 3/. Virtually no fluorescence response is observable in the case of AlF/sub 3/. Supplementary measurements on multilayer stacks confirm the contribution of hydrocarbon and cerium emission in high-reflective UV mirrors upon ArF excimer laser irradiation. Energy density dependent measurements indicate a linear absorption process as the origin of UV laser induced fluorescence in LaF/sub 3/. Luminescence calculations are applied as a helpful tool in order to account for interference effects that are inherently to be found in the multilayer emission spectra.