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Nanoprocessing of semiconductors and metals with nJ femtosecond laser pulses

: Harzic, R. le; Sauer, D.; Riemann, I.; König, K.


Titterton, D.H. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Europe, Cardiff; United States, Department of Defense -DoD-, Washington/D.C.:
Technologies for optical countermeasures II, femtosecond phenomena II, and passive millimetre-wave and terahertz imaging II 2005 : 26 - 28 September, Bruges, Belgium
Bellingham, WA: SPIE - The International Society for Optical Engineering, 2005 (SPIE Proceedings Series 5989)
ISBN: 0-8194-6011-7
Art. 59890O
Conference "Optics and Photonics for Defence and Security" <2005, Bruges>
Conference Paper
Fraunhofer IBMT ()

We report on sub-m structuring of semiconductors, dielectrics, polymers and metals using a laser scanning microscope. A commercial Ti:Sapphire oscillator laser (20 nJ/pulse; 90 MHz; 150 fs) was coupled into a laser scanning microscope FemtOcut (JenLab GmbH). High numerical aperture objectives were applied to obtain fluences in the range of a few J/cm2 which are well above the ablation threshold. Such a cost-effective and reliable system compared to amplified lasers systems (J or mJ/pulse) is adapted for material manufacturing and can be of prime interest for specific applications in security like counterfeiting.