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267-W cw AlGaAs/GaInAs diode laser bars

 
: Braunstein, J.; Mikulla, M.; Kiefer, R.; Walther, M.; Jandeleit, J.; Brandenburg, W.; Loosen, P.; Poprawe, R.; Weimann, G.

:

Burnham, G.T. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Laser diodes and LEDs in industrial, measurement, imaging, and sensors applications II : Testing, packaging, and reliability of semiconductor lasers V: 26 - 25 January 2000, San Jose, California
Bellingham, WA: SPIE, 2000 (SPIE Proceedings Series 3945)
ISBN: 0-8194-3562-7
ISBN: 978-0-8194-3562-0
ISSN: 0277-786X
pp.17-22
Conference "Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications" <2, 2000, San Jose, Calif.>
English
Conference Paper
Fraunhofer IAF ()

Abstract
High-power 980 nm-diode laser bars have been fabricated in the AlGaAs/GaInAs material system. The bars are 1 cm wide and comprise 25 broad area lasers with 200 m aperture and 2 mm resonator length. Hence, the fill factor is 50%. To reduce the power density at the facet, we used an LOC structure with low modal gain, which also helps to prevent filamentation. The measured threshold current was 14 A and a record output power of 267 W cw was achieved at 333 A with an electro-optical conversion efficiency of 40%. With less thermal load, at 150 W output power the conversion efficiency was as high as 50% and the corresponding slope efficiency was 0.9 W/A. Microchannel copper heat sinks with a thermal resistance of less than 0.29 K/W were used for mounting the bars. The coolant temperature was set for all measurements to 22 °C and the flux was 0.9 l/min. Additionally, the top electrode of the p-side down mounted bars was cooled by a second heat sink, which was pressed gently on the top electrode.

: http://publica.fraunhofer.de/documents/N-169943.html