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Analysis of heat flows and their impact on the reliability of high-power diode lasers

: Tomm, J.W.; Rinner, F.; Rogg, J.; Thamm, E.; Ribbat, C.; Selling, R.; Bimberg, D.


Fallahi, M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
High-power fiber and semiconductor lasers : 27 January 2003, San Jose, California, USA
Bellingham, WA: SPIE, 2003 (Proceedings of SPIE 4993)
ISBN: 978-0-8194-4793-7
ISBN: 0-8194-4793-5
Conference "High-Power Fiber and Semiconductor Lasers" <2003, San Jose/Calif.>
Conference Paper
Fraunhofer IAF ()

Facet overheating is considered a potential source for device degradation of diode lasers. We test two different concepts for the reduction of facet temperatures of high-power diode lasers by measuring the facet temperatures by means of Raman spectroscopy. For conventional high-power broad area lasers we demonstrate the reduction of the facet overheating by the introduction of current blocking layers by a factor of 3-4. For another set of devices among them quantum well and quantum-dot lasers with almost the same device design we find a reduction of the overheating by 40 to 60 percent for the dot devices. Thus we qualify two very different but promising technological approaches for increasing device reliability.