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Resonant tunnelling and intersubband absorption in AlN - GaN superlattices

 
: Baumann, E.; Giorgetta, F.R.; Hofstetter, D.; Wu, H.; Schaff, W.J.; Eastman, L.F.; Kirste, L.

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Physica status solidi. C 2 (2005), No.3, pp.1014-1018
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
English
Journal Article
Fraunhofer IAF ()

Abstract
We report on intersubband absorption and photovoltage measurements on regular GaN/AlN-based superlattice structures at 1.55 µm. For high barriers, the photovoltage peaks at a higher energy than the absorbance spectrum due to the decrease of the tunnelling probability. The observed photovoltage is thus the macroscopic manifestation that the 2-dimensional electron gas at the top of the superlattice gets depleted by a vertical transport of electrons.

: http://publica.fraunhofer.de/documents/N-169900.html