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2005
Conference Paper
Titel
Growth-temperature-dependent bandgap of MBE-grown GaInNAs epilayers lattice matched to GaAs
Abstract
We have observed that the bandgap of lattice-matched GaInNAs-on-GaAs epilayers, grown by molecular beam epitaxy under constant fluxes, noticeably increases as growth temperature increases within the 410-470°C range. The increase in the band gap with increasing growth temperature has been found to be due to a decrease in the substitutional nitrogen content as well as to an enhancement in the amount of N-Ga3In clusters relative to the N-Ga4 ones.