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Tuning and brightness optimization of high-performance GaSb-based semiconductor disk lasers from 1.86 to 2.80 µm

: Hempler, N.; Hopkins, J.-M.; Rattunde, M.; Rösener, B.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.


Institute of Electrical and Electronics Engineers -IEEE-:
European Conference on Lasers & Electro-Optics and the 11th European Quantum Electronics Conference, CLEO Europe - EQEC 2009 : 14 - 19 June 2009, Munich
Piscataway/NJ: IEEE, 2009
ISBN: 978-1-4244-4079-5
ISBN: 978-1-4244-4080-1
1 pp.
European Conference on Lasers & Electro-Optics (CLEO Europe) <2009, München>
European Quantum Electronics Conference (EQEC) <11, 2009, München>
Conference Paper
Fraunhofer IAF ()

The optically-pumped semiconductor disk laser (SDL) is now well established as a high-brightness, watt- class laser source. As well as raw power scaling this laser format also offers flexibility and functionality due to the engineerable semiconductor structure and external optical cavity. Wavelength coverage of 0.4 to 2.35mum has been realised. The demonstration of tunable, tailored and optimized output performance is crucial to meet the demands of many applications, especially in the important 2.Xmum region. Here we report the cw operation, brightness optimization and broad tunability of a family of SDL structures over a wide range of central wavelengths from 1.9 to 2.8mum.