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Integrated receivers up to 220 GHz utilizing GaAs-mHEMT technology

 
: Zirath, H.; Wadefalk, N.; Kuzhuharov, R.; Gunnarsson, S.E.; Cherednichenko, S.; Angelov, I.; Abbasi, M.; Hansson, B.; Vassilev, V.; Svedin, J.; Rudner, S.; Kallfass, I.; Leuther, A.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009 : Singapore, 9 - 11 December 2009
Piscataway/NJ: IEEE, 2009
ISBN: 978-1-4244-5031-2
ISBN: 978-1-4244-5032-9
pp.225-228
International Symposium on Radio-Frequency Integration Technology (RFIT) <2009, Singapore>
English
Conference Paper
Fraunhofer IAF ()

Abstract
The status of integrated receivers for remote sensing and communication applications from 60 GHz to higher frequencies is reviewed. Recent receiver results for silicon and III-V technologies are compared with Schottky diode receivers.

: http://publica.fraunhofer.de/documents/N-169859.html