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Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors

 
: Lim, T.; Aidam, Rolf; Kirste, Lutz; Waltereit, Patrick; Quay, Rüdiger; Müller, Stefan; Ambacher, O.

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Applied Physics Letters 96 (2010), No.25, Art. 252108, 3 pp.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
English
Journal Article
Fraunhofer IAF ()
aluminium compounds; current density; electron density; electron mobility; gallium compound; high electron mobility transistor; III-V semiconductor; indium compound; MOCVD; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors

Abstract
Quaternary InAlGaN semiconductors with AlN mole fractions between 40% and 81% and respective InN contents of 7% and 19% including InAlN as a ternary border case have been grown by plasma-assisted molecular beam epitaxy. The electron mobility in InAlGaN-based heterostructures increases with Ga concentration in the barrier up to 1460 cm2 /V s at a sheet electron density of 1.9× 10(exp 13) cm-2. An advanced spacer comprising an AlN/GaN/AlN triple-layer sequence is inserted between the GaN-buffer and the InAlGaN-barrier. Transistors with thin quaternary barrier show a large current density of 2.3 A/mm and an excellent transconductance of 675 mS/mm.

: http://publica.fraunhofer.de/documents/N-169852.html