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Gain of blue and cyan InGaN laser diodes

: Lermer, T.; Gomez-Iglesias, A.; Sabathil, M.; Müller, J.; Lutgen, S.; Strauss, U.; Pasenow, B.; Hader, J.; Moloney, J.V.; Koch, S.W.; Scheibenzuber, W.; Schwarz, U.T.


Applied Physics Letters 98 (2011), No.2, Art. 021115, 3 pp.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Journal Article
Fraunhofer IAF ()

Experimental gain spectra of 450 and 490 nm laser diodes on c-plane GaN are analyzed by detailed comparison with the results of a fully microscopic theory. The gain calculation shows the importance of electron LO-phonon coupling. The whole spectral gain shape, not only the low energy tail, is strongly influenced by the LO-phonon contribution. The inhomogeneous broadening parameter increases by a factor of about two for the cyan laser diode in comparison with the blue laser structure. This indicates an increase in alloy and thickness fluctuations for the longer wavelength material.