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Three-dimensional GaN for semipolar light emitters

: Wunderer, T.; Feneberg, M.; Lipski, F.; Wang, J.; Leute, R.A.R.; Schwaiger, S.; Thonke, K.; Chuvilin, A.; Kaiser, U.; Metzner, S.; Bertram, F.; Christen, J.; Beirne, G.J.; Jetter, M.; Michler, P.; Schade, L.; Vierheilig, C.; Schwarz, U.T.; Dräger, A.D.; Hangleiter, A.; Scholz, F.


Physica status solidi. B 248 (2011), No.3, pp.549-560
ISSN: 0031-8957
ISSN: 0370-1972
Journal Article
Fraunhofer IAF ()
InGaN; light emitting device; quantum well; III-V semiconductor

Selective-area epitaxy is used to form three-dimensional (3D) GaN structures providing semipolar crystal facets. On full 2-in. sapphire wafers we demonstrate the realization of excellent semipolar material quality by introducing inverse GaN pyramids. When depositing InGaN quantum wells on such a surface, the specific geometry influences thickness and composition of the films and can be nicely modeled by gas phase diffusion processes. Various investigation methods are used to confirm the drastically reduced piezoelectric polarization on the semipolar planes. Complete electrically driven light-emitting diode test structures emitting in the blue and blue/green spectral regions show reasonable output powers in the milliwatt regime. Finally, first results of the integration of the 3D structures into a conventional laser design are presented.