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High-power, picosecond pulse generation from surface implanted InGaAsP/InP ( = 1.53 m) laser diodes


IEEE Lasers and Electro-Optics Society; Optical Society of America -OSA-, Washington/D.C.:
CLEO 2000, Conference on Lasers and Electro-Optics. Technical digest : Summaries of papers presented at the Conference on Lasers and Electro-Optics ; Moscone Convention Center, San Francisco, California, May 7-12, 2000. Conference edition
Washington, DC: OSA, 2000
ISBN: 1-55752-633-8
Conference on Lasers and Electro-Optics (CLEO) <21, 2000, San Francisco/Calif.>
Journal Article
Fraunhofer HHI ()

A cost-effective surface-implantation technique was developed for the on-wafer fabrication of short pulse InGaAsP/InP laser diodes. The achievement of 20 ps/1 W peak power at high yield with these devices shows a promising alternative to solid-state-laser solutions.