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'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP ( = 1.53-1.55 m) laser diodes

 
: Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kuebler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.

IEEE Electron Devices Society:
International Conference on Indium Phosphide and Related Materials 2000. Conference proceedings : 14 - 18 May 2000, Williamsburg Marriott, Williamsburg, Virginia, USA
Piscataway, NJ: IEEE, 2000
ISBN: 0-7803-6320-5
ISBN: 0-7803-6321-3
ISBN: 0-7803-6322-1
pp.278-281
International Conference on Indium Phosphide and Related Materials (IPRM) <12, 2000, Williamsburg/Va.>
English
Conference Paper
Fraunhofer HHI ()

Abstract
A cost-effective, on-wafer surface implantation technique was applied for the fabrication of short pulse InGaAsP/InP laser diodes. Based on thick electroplated Au masks, local ion implantation could be performed, allowing a versatile design of the absorber region. Picosecond pulses with typical FWHM of 20 ps and optical power exceeding 1.8 W were obtained. The measured emission spectrum in the pulsed regime demonstrates the potential of such devices to pump commercially available EDFA's.

: http://publica.fraunhofer.de/documents/N-169806.html