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GaAs-based tunnel junctions

 
: Möller, C.; Böttcher, J.; Künzel, H.

:

Alferov, Z.I.; Esaki, L.:
10th International Symposium on Nanostructures: Physics and Technology
Bellingham, WA: SPIE, 2003 (Proceedings of SPIE 5023)
ISBN: 0-8194-4824-9
pp.516-518
International Symposium on Nanostructures: Physics and Technology <10, 2002, Sankt Petersburg>
English
Conference Paper
Fraunhofer HHI ()

Abstract
The development of high quality GaAs-based tunnel junctions grown by molecular beam epitaxy was systematically studied. Fabricated Si/Be-doped GaAs tunnel junctions show record low junction resistance of less than 7×10-5 /cm2 and a peak current density of > 1900 A/cm2. The enhancement of lateral current spreading is demonstrated by large-area vertical-emitting LEDs.

: http://publica.fraunhofer.de/documents/N-169727.html