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Ferromagnetism in partially spin-polarized GaInAs quantum wells

: Vogt, F.; Nachtwei, G.; Hein, G.; Künzel, H.


Menendez, J. ; American Institute of Physics -AIP-, New York:
Physics of Semiconductors 2004. Vol.B : 27th International Conference on the Physics of Semiconductors, ICPS-27: Flagstaff, Arizona, 26-30 July, 2004
Melville, NY: American Institut of Physics, 2005 (AIP conference proceedings 772)
ISBN: 0-7354-0257-4
International Conference on the Physics of Semiconductors (ICPS) <27, 2004, Flagstaff/Ariz.>
Conference Paper
Fraunhofer HHI ()

We performed measurements of the Shubnikov-de Haas effect (SdH) and of the Quantum-Hall effect (QHE) at GaInAs quantum wells confined by AlInAs barriers. At odd filling factors (1 and 3), the two-dimensional electron system (2DES) of the quantum well is partially spin-polarized, leading to an enhanced effective Landé factor g*. In this case, asymmetric and hysteretic SdH-oscillations were predicted. At filling factor 1 (higher spin polarization) the asymmetry could be confirmed experimentally. At filling factor 3, the predicted asymmetry could be observed at a sample of higher electron density in tilted magnetic fields above 12 T. A hysteresis was not resolvable due to a reduced spin polarization.