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Quantum dot photonics: Edge emitter, amplifier and VCSEL

: Hopfer, F.; Kuntz, M.; Lämmlin, M.; Ledentsov, N.N.; Kovsh, A.R.; Mikhrin, S.S.; Kaiander, I.; Haisler, V.; Lochmann, A.; Mutig, A.; Schubert, C.; Grote, N.; Umbach, A.; Ustinov, V.M.; Pohl, U.W.; Bimberg, D.


Kharkiv University of Radio Electronics:
2nd International Conference on Advanced Optoelectronics and Lasers, CAOL 2005. Proceedings. Vol.1 : Yalta, Crimea, Ukraine, September 12 - 17, 2005
Piscataway, NJ: IEEE Operations Center, 2005
ISBN: 0-7803-9130-6
International Conference on Advanced Optoelectronics and Lasers (CAOL) <2, 2005, Jalta>
Conference Paper
Fraunhofer HHI ()

Low transparency current density and improved temperature stability with a large characteristic temperature T0 > 650 K up to 80 °C are demonstrated for 1.3 m MBE grown QD-edge emitters. Digital modulation with an open eye pattern up to 12 Gb/s at room temperature and bit error rate below 10-12 for a 10 Gb/s modulation was realized for this wavelength. Semiconductor optical amplifiers based on InGaAs QDs achieved a chip gain of 28 dB. Conventionally doped semiconductor DBR QD-VCSEL containing 17 p-modulation doped QD layers demonstrated a CW output power of 1.7 mW and differential efficiency of 20 % at 20 °C. First MOCVD grown QD-VCSEL with selectively oxidized DBRs and 9 QD-layers were realized, emission was at 1.1 m. A CW multimode output power of 1.5 mW and external efficiency of 45 % was achieved at 20 °C. The minimum threshold current from a device with 2 urn aperture was 85 A.