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Quantum dot photonics: Edge emitter, amplifier and VCSEL

: Hopfer, F.; Kuntz, M.; Lämmlin, M.; Fiol, G.; Ledentsov, N.N.; Kovsh, A.R.; Mikrin, S.S.; Kaiander, I.; Haisler, V.; Lochmann, A.; Mutig, A.; Schubert, C.; Umbach, A.; Ustinov, V.M.; Pohl, U.W.; Bimberg, D.


Sukhoivanov, I.A. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.; IEEE Lasers and Electro-Optics Society:
Second International Conference on Advanced Optoelectronics and Lasers 2005 : 12-17 September 2005, Yalta, Ukraine
Bellingham, WA: SPIE, 2008 (Proceedings of SPIE 7009)
ISBN: 978-0-8194-7219-9
Paper 700902
International Conference on Advanced Optoelectronics and Lasers (CAOL) <2, 2005, Yalta>
Conference Paper
Fraunhofer HHI ()

Low transparency current density and improved temperature stability with a large characteristic temperature T0 > 650 K up to 80 °C are demonstrated for 1.3 m MBE grown InGaAs quantum dot (QD) edge emitting lasers. Digital modulation with an open eye pattern up to 12 Gb/s at room temperature and bit error rate below 10-12 for 10 Gb/s modulation was realized for this wavelength. Semiconductor optical amplifiers based on InGaAs QD gain media achieved a chip gain of 26 dB. A conventionally doped semiconductor DBR QD-VCSEL containing 17 p-modulation doped QD layers demonstrated a cw output power of 1.8 mW and a differential efficiency of 20 % at 20 °C. The maximum -3dB modulation bandwidth at 25 °C was 3 GHz. First MOCVD-grown QD-VCSELs with selectively oxidized DBRs and 9 QD-layers were realized, emitting at 1.1 m. A cw multimode output power of 1.5 mW, 6 mW in pulsed operation, and an cw external efficiency of 45 % were achieved at 20 °C. The minimum threshold current o f a device with 2 m aperture was 85 A.