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An empirical model describing the MLC retention of charge trap flash memories

: Melde, T.; Hoffmann, R.; Yurchuk, E.; Paul, J.; Mikolajick, T.

DOI: 10.1109/IIRW.2010.5706502

	Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society; IEEE Reliability Society: IEEE International Integrated Reliability Workshop, IRW 2010 : Final report, S. Lake Tahoe, California, USA, 17 - 21 October 2010 Piscataway/NJ: IEEE, 2010 ISBN: 978-1-4244-8521-5 ISBN: 978-1-4244-8524-6 ISBN: 1-4244-8521-5 pp.118-120
	International Integrated Reliability Workshop (IRW) <2010, Lake Tahoe/Calif.>

	English
	Conference Paper
	Fraunhofer CNT ()

Abstract
In this publication a formula is developed to describe the program level dependent charge loss of charge trapping memory cells. We demonstrate that the retention loss can be calculated using 5 parameters with an excellent agreement to the measured results. The increasing non-linearity of the retention loss for thicker nitride layers is evaluated using this model. In addition, the strong temperature dependency of the TANOS stack is clarified.

: http://publica.fraunhofer.de/documents/N-169017.html